CM400HA-34H Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
fabricante
CM400HA-34H Datasheet PDF : 4 Pages
| |||
MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M8 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
1700
±20
400
800*
400
800*
4100
8.83~10.8
Mounting Torque, M6 Mounting
–
1.96~2.94
Mounting Torque, M4 Terminal
–
0.98~1.47
Weight
–
980
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4000
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
ICES
IGES
VGE(th)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 40mA, VCE = 10V
Collector-Emitter Saturation Voltage
Total Gate Charge
VCE(sat)
QG
IC = 400A, VGE = 15V
IC = 400A, VGE = 15V, Tj = 150°C
VCC = 750V, IC = 400A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 400A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
Typ.
Max. Units
–
–
4
mA
–
–
0.5
µA
4.5
6.0
7.5
Volts
–
2.7
3.7** Volts
–
–
–*
Volts
–
2900
–
nC
–
–
3.4
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Cies
Coes
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCC = 750V, IC = 400A,
VGE1 = VGE2 = 15V, RG = 10Ω
IE = 400A, diE/dt = –800A/µs
IE = 400A, diE/dt = –800A/µs
Min.
Typ.
Max. Units
–
–
85
nF
–
–
20
nF
–
–
15
nF
–
–
900
ns
–
–
1500
ns
–
–
1500
ns
–
–
800
ns
–
–
400
ns
–
7.0
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Per FWDi
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ. Max. Units
–
0.030 °C/W
–
0.060 °C/W
–
0.023 °C/W
Sep.1998
Share Link: 