DTC114Y_15 Ver la hoja de datos (PDF) - ROHM Semiconductor

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DTC114Y_15

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

ROHM Semiconductor 

DTC114Y series

　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Input voltage

Output current

Collector current

DTC114YM

DTC114YEB

Power dissipation

DTC114YE

DTC114YUB

DTC114YUA

DTC114YKA

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCC

50

V

VIN

-6 to 40

V

IO

70

mA

IC(MAX)*1

100

mA

150

150

150

PD*2

mW

200

200

200

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

VI(off)

VI(on)

VO(on)

II

IO(off)

GI

R1

R2/R1

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 1mA

IO = 5mA, II = 0.25mA

VI = 5V

VCC = 50V, VI = 0V

VO = 5V, IO = 5mA

-

-

Transition frequency

f

*1

T

VCE = 10V, IE = -5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.

Values

Unit

Min. Typ. Max.

-

- 0.3

V

1.4 -

-

- 100 300 mV

-

- 880 μA

-

- 500 nA

68 -

-

-

7 10 13 kΩ

3.7 4.7 5.7 -

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20151008 - Rev.002

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