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ATF-531P8

High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package

Avago Technologies 

ATF-531P8

High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT

in 2x2 mm2 LPCC[3] ­Package

Data Sheet

Description

Avago Technologies’ ­­ATF‑531P8 is a single-voltage high

linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-

standard leadless plastic chip carrier (LPCC[3]) package.

The device is ideal as a high linearity, low-noise, medium-

power amplifier. Its operating frequency range is from 50

MHz to 6 GHz.

The thermally efficient package measures only 2 mm

x 2 mm x 0.75 mm. Its backside metalization provides

excellent thermal dissipation as well as visual evidence

of solder reflow. The device has a Point MTTF of over 300

years at a mounting temperature of +85°C. All devices are

100% RF & DC tested.

Pin Connections and Package Marking

Pin 8

Pin 7 (Drain)

Pin 6

Pin 5

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

Pin 4 (Source)

Bottom View

Pin 1 (Source)

Pin 8

Pin 2 (Gate)

Pin 3

Pin 4 (Source)

3Px

Top View

Pin 7 (Drain)

Pin 6

Pin 5

Note:

Package marking provides orientation and identification:

“3P” = Device Code

“x” = Date code indicates the month of manufacture.

Features

• Single voltage operation

• High linearity and gain

• Low noise figure

• Excellent uniformity in product specifications

• Small package size:

2.0 x 2.0 x 0.75 mm

• Point MTTF > 300 years[2]

• MSL-1 and lead-free

• Tape-and-reel packaging option available

Specifications

2 GHz; 4V, 135 mA (Typ.)

• 38 dBm output IP3

• 0.6 dB noise figure

• 20 dB gain

• 10.7 dB LFOM[4]

• 24.5 dBm output power at 1 dB gain compression

Applications

• Front-end LNA Q1 and Q2 driver or pre-driver ampli‑

fier for Cellular/PCS and WCDMA wireless infrastruc‑

ture

• Driver amplifier for WLAN, WLL/RLL and MMDS ap‑

plications

• General purpose discrete E-pHEMT for other high

linearity applications

Notes:

1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional

depletion mode devices.

2. Refer to reliability datasheet for detailed MTTF data.

3. Conforms to JEDEC reference outline MO229 for DRP-N

4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.

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