PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 (NPN)
BCV26, BCV46
3
2
1 VPS05161
Type
BCV26
BCV46
Marking
FDs
FEs
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 74 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCV26
BCV46
30
60
40
80
10
10
500
800
100
200
360
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
210
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1
Jul-13-2001