STGW25M120DF3 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

fabricante

STGW25M120DF3

Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

STMicroelectronics 

STGW25M120DF3, STGWA25M120DF3

Electrical characteristics

Figure 20. Short-circuit time and current vs. VGE Figure 21. Switching times vs. collector current

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Figure 22. Switching times vs. gate resistance Figure 23.Reverse recovery current vs. diode

current slope

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Figure 24. Reverse recovery time vs. diode

current slope

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Figure 25.Reverse recovery charge vs. diode

current slope

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DocID026223 Rev 2

9/18

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