STGW25M120DF3 Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante

STGW25M120DF3

Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

STMicroelectronics 

Electrical characteristics

STGW25M120DF3, STGWA25M120DF3

Figure 14. Capacitance variations

Figure 15. Gate charge vs. gate-emitter voltage

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Figure 16. Switching losses vs. collector

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Figure 17. Switching losses vs. gate resistance

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Figure 18. Switching losses vs. junction

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Figure 19. Switching losses vs. collector

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