STGW25M120DF3 Ver la hoja de datos (PDF) - STMicroelectronics
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STGW25M120DF3 Datasheet PDF : 18 Pages
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STGW25M120DF3, STGWA25M120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr
Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 25 A,
VGE = 15 V, RG= 15 Ω
see Figure 29
Ets Total switching losses
td(on) Turn-on delay time
tr
Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 25 A,
RG= 15 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 29
Ets Total switching losses
tsc
Short-circuit withstand time
VCC ≤ 600V, VGE= 15V,
TJstart ≤ 150°C
1. Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
-
28
- ns
-
15
- ns
- 1370 - A/µs
- 150 - ns
- 155 - ns
- 0.85 - mJ
- 1.3 - mJ
- 2.15 - mJ
-
28
- ns
-
17
- ns
- 1270 - A/µs
- 155 - ns
- 240 - ns
- 1.6 - mJ
- 1.9 - mJ
- 3.5 - mJ
10
- µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/ /dt
Err
trr
Qrr
Irrm
dIrr/ /dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 25 A, VR = 600 V,
VGE = 15 V, see Figure 29
di/dt = 1000 A/µs
IF = 25 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
see Figure 29
di/dt = 1000 A/µs
- 265 - ns
- 1.2 - µC
-
19 -
A
- 1090 - A/µs
- 0.22 - mJ
- 585 - ns
-
5
- µC
-
30 -
A
- 270 - A/µs
- 0.75 - mJ
DocID026223 Rev 2
5/18
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