SS8050 Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza

componentes Descripción

fabricante

SS8050

Silicon Epitaxial Planar Transistor

Diode Semiconductor Korea 

Diode Semiconductor Korea

Silicon Epitaxial Planar Transistor

SS8050

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

5

V

Collector cut-off current

Collector cut-off current

Emitter cut-off current

ICBO

ICEO

IEBO

VCB=40V,IE=0

VCE=20V,IB=0

VEB=5V,IC=0

0.1 μA

0.1 μA

0.1 μA

DC current gain

VCE=1V,IC=100mA

120

400

hFE

VCE=1V,IC=800mA

40

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCE(sat)

VBE(sat)

IC=800 mA, IB= 80mA

IC=800 mA, IB= 80mA

0.5 V

1.2 V

Base-emitter voltage

Transition frequency

VBE

VCE=1V IC=10mA

VCE=10V, IC= 50mA

fT

f=30MHz

100

1

V

MHz

CLASSIFICATION OF hFE(1)

Rank

L

Range

120-200

H

200-350

J

300-400

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