2SB561 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

fabricante

2SB561

Silicon PNP transistor in a TO-92 Plastic Package. 

Unspecified 

2SB561

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICM

PC

Tj

Tstg

DATA SHEET

数值

Rating

-25

-20

-5.0

-0.7

-1.0

0.5

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

符号

Symbol

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

VCE(sat)

VBE

fT

Cob

测试条件

Test Conditions

IC=-10μA IE=0

IC=-1.0mA IB=0

IE=-10μA

VCB=-20V

VEB=-4V

VCE=-1.0V

IC=-0.5A

VCE=-1.0V

VCE=-1.0V

VCB=-10V

f=1.0MHz

IC=0

IE=0

IC=0

IC=-0.15A

IB=-0.05A

IC=-0.15A

IC=-0.15A

IE=0

最小值 典型值 最大值

Min Typ Max

-25

单位

Unit

V

-20

V

-5.0

-1.0

-1.0

85

240

-0.2 -0.5

-0.75 -1.0

350

20

V

μA

μA

V

V

MHz

pF

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