S849T Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

fabricante

S849T

MOSMIC® for TV–Tuner Prestage with 12 V Supply Voltage

Vishay Semiconductors 

S849T/S849TR

Vishay Telefunken

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Gate 1 - source

±IG1S = 10 mA, VG2S = VDS = 0

breakdown voltage

Gate 2 - source

±IG2S = 10 mA, VG1S = VDS = 0

breakdown voltage

Gate 1 - source

leakage current

Gate 2 - source

leakage current

+VG1S = 6 V, VG2S = VDS = 0

–VG1S = 6 V, VG2S = VDS = 0

±VG2S = 6 V, VG1S = VDS = 0

Drain current

Self-biased

operating current

VDS = 12 V, VG1S = 0, VG2S = 6 V

VDS = 12 V, VG1S = nc, VG2S = 6 V

Gate 2 - source

cut-off voltage

VDS = 12 V, VG1S = nc, ID = 200 mA

Symbol Min Typ Max Unit

±V(BR)G1SS 8

12 V

±V(BR)G2SS 8

12 V

+IG1SS

–IG1SS

±IG2SS

60 mA

120 mA

20 nA

IDSS

IDSP

50

500 mA

8 12 16 mA

VG2S(OFF)

1.0

V

Electrical AC Characteristics

VDS = 12 V, VG2S = 6 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified

Parameter

Forward transadmittance

Gate 1 input capacitance

Feedback capacitance

Output capacitance

Power gain

AGC range

Noise figure

Test Conditions

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

GS = 3,3 mS, GL = 1 mS, f = 800 MHz

VDS = 12 V, VG2S = 1 to 6 V, f = 800 MHz

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

GS = 3,3 mS, GL = 1 mS, f = 800 MHz

Symbol Min Typ Max Unit

y21s 20 24 28 mS

Cissg1

2.1 2.5 pF

Crss

20

fF

Coss

0.9

pF

Gps

26

dB

Gps 16.5 20

dB

DGps 40

dB

F

1

dB

F

1.3

dB

Caution for Gate 1 switch-off mode:

No external DC-voltage on Gate 1 in active mode!

Switch-off at Gate 1 with VG1S

Using open collector switching

< 0.7 V is

transistor

feasible.

(inside of

PLL),

insert

10

kW

collector

resistor.

www.vishay.de • FaxBack +1-408-970-5600

2 (8)

Document Number 85051

Rev. 3, 20-Jan-99

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