BAS85 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

fabricante

BAS85

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

Product specification

BAS85

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD

package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an

integrated protection ring against

static discharges.

This surface mounted diode is

encapsulated in a hermetically sealed

SOD80C glass SMD package with

tin-plated metal discs at each end. It

is suitable for “automatic placement”

and as such it can withstand

immersion soldering.

handbook, halfpage

k

a

MAM190

Cathode indicated by a grey band.

Fig.1 Simplified outline (SOD80C), pin configuration and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VR

IF

IF(AV)

continuous reverse voltage

continuous forward current

average forward current

IFRM

IFSM

Tstg

Tj

Tamb

repetitive peak forward current

non-repetitive peak forward current

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

VRWM = 25 V; a = 1.57; δ = 0.5;

note 1; Fig.2

tp ≤ 1 s; δ ≤ 0.5

tp = 10 ms

MIN.

−

−

−

−

−

−65

−

−65

Note

1. Refer to SOD80 standard mounting conditions.

MAX.

30

200

200

UNIT

V

mA

mA

300

mA

5

A

+150 °C

125

°C

+125 °C

1996 Oct 01

2

Share Link: