2SC2577 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SC2577

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=2A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=10V

Product Specification

2SC2577

MIN TYP. MAX UNIT

80

V

120

V

6

V

1.5

V

100 μA

100 μA

50

20

MHz

2

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