5962G9475405QXX Ver la hoja de datos (PDF) - Aeroflex UTMC
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5962G9475405QXX Datasheet PDF : 19 Pages
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DC ELECTRICAL CHARACTERISTICS 1, 7
(VDD2 = 5.0V ±10%; VSS = 0V3, -55°C < TC < +125°C)
SYMBOL
PARAMETER
CONDITION
MINIMUM MAXIMUM
VIL
Low-level input voltage TTL
--
.8
VIH
High-level input voltage TTL
2.2
--
VIL
Low-level input voltage CMOS
--
.3*VDD
VIH
High-level input voltage CMOS
.7*VDD
--
VOL
Low-level output voltage IOL = 12.0mA, VDD = 4.5V (TTL)
.4
VOH High-level output voltage IOH = -12.0mA, VDD = 4.5V (TTL)
2.4
--
VOL
VOH
Low-level output voltage
High-level output voltage
IOL = 200µA, VDD = 4.5V (CMOS)
IOH = -200µA, VDD = 4.5V (CMOS)
--
VDD-0.05
VSS+0.05
--
IIN
Input leakage current
VIN = VDD and VSS
-10
10
IOZ
Three-state output leakage VO = VDD and VSS, VDD = 5.5V
-10
10
current
IOS4,5
CIN5,6
Short-circuit output cur-
rent
Input capacitance
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
ƒ=1MHz @0V
-160
160
--
15
CI/O5,6 Bidirectional capacitance ƒ=1MHz @0V
--
15
IDD5
Supply current: Output
three-state, worst-case pat-
tern programmed,
ƒ=fMAX1
VDD = 5.5V
--
120
IDDQ
Supply current:
Unprogrammed
VDD = 5.5V
--
25
Notes:
1. All specifications valid for radiation dose < 1E6 rads(Si).
2. See page 12 for minimum VDD requirements at power-up.
3. Maximum allowable relative shift equals 50mV.
4. Duration not to exceed 1 second, one output at a time.
5. Tested initially and after any design or process changes that affect that parameter and, therefore, shall be guaranteed to the limit specified.
6. All pins not being tested are to be open.
7. CMOS levels only tested on CMOS devices. TTL levels only tested on TTL devices.
UNIT
V
V
V
V
V
V
V
V
µA
µA
mA
pF
pF
mA
mA
8
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