BC846B-H Ver la hoja de datos (PDF) - Formosa Technology
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BC846B-H Datasheet PDF : 9 Pages
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SMD NPN Transistor
BC846A/B-BC847A/B/C
Formosa MS
BC848A/B/C-BC849B/C-BC850B/C
Electrical characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector-Emitter breakdown voltage
Collector cutoff current
CONDITIONS
Symbol
Ic = 10uA
BC846A,B
BC847A,B,C BC850B,C V(BR)CBO
BC848A,B,C BC849B,C
Ic = 10mA
BC846A,B
BC847A,B,C BC850B,C V(BR)CEO
BC848A,B,C BC849B,C
IE = 1.0uA
BC846A,B
BC847A,B,C BC850B,C V(BR)EBO
BC848A,B,C BC849B,C
IC = 10uA, VEB = 0
BC846A,B
BC847A,B,C BC850B,C V(BR)CES
BC848A,B,C BC849B,C
VCB = 30V
ICBO
VCB = 30V, TA = 150OC
MIN.
80
50
30
65
45
30
6.0
6.0
5.0
80
50
30
TYP.
MAX. UNIT
V
V
V
V
15 nA
5.0 mA
On characteristics
PARAMETER
DC current gain(Ic = 2.0mA, VCE = 5.0V)
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter on voltage
CONDITIONS
Symbol MIN. TYP. MAX. U-NIT
BC846A, BC847A, BC848A
110 180 220
BC846B, BC847B, BC848B
200 290 450
BC849B, BC850B
hFE
BC847C, BC848C, BC849C, BC850C
420 520 800
Ic = 10mA, IB = 0.5mA
Ic = 100mA, IB = 5.0mA
VCE(sat)
0.25
V
0.6
Ic = 10mA, IB = 0.5mA
Ic = 100mA, IB = 5.0mA
0.7
VBE(sat)
V
0.9
Ic = 2.0mA, VCE = 5.0V
Ic = 10mA, VCE = 5.0V
580 660 700
VBE(on)
V
770
Small-signal characteristics
PARAMETER
Current-gain-bandwidth product
Output capacitance
Noise figure
CONDITIONS
IC = 10mA, VCE = 5.0V, f = 100MHz
VCB = 10V, f = 1.0MHz
(IC = 0.2mA, VCE = 5.0V, RS = 2.0ΚΩ,
f = 1.0KHz, BW = 200Hz)
BC846A,B
BC847A,B,C
BC848A,B,C
BC849B,C
BC850B,C
Symbol MIN. TYP. MAX. UNIT
fT
Cobo
100
MHz
4.5 VpFdc
10
NF
dB
4
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Page 3
Document ID Issued Date
DS-231154
2009/08/10
Revised Date Revision
2011/07/21
C
Page.
9
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