2N3772 Ver la hoja de datos (PDF) - Continental Device India Limited
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2N3772 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR POWER TRANSISTOR
2N3772
TO-3
Metal Can Package
Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current Continuous
Peak
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VCEX
VEBO
IC
IB
PD
Tj, Tstg
VALUE
100
60
80
7
20
30
5
15
150
0.855
- 65 to +200
UNITS
V
V
V
V
A
A
W
W/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
0.170
ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Cut Off Current
Collector Cut Off Current
SYMBOL
VCEO (sus)*
VCEX (sus)
VCER (sus)
ICEO
ICEV
TEST CONDITION
IC=0.2A, IB=0
IC=0.2A, RBE=100Ω,VEB=(off)=1.5V
IC=0.2A, RBE=100Ω,
VCE=50V, IB=0
VCE=100V, VEB(off)=1.5V
MIN
60
80
70
Tc=150ºC
VCE=45V, VEB(off)=1.5V
Collector Cut Off Current
ICBO
VCB=100V, IE=0
Emitter Cut Off Current
IEBO
VBE=7V, IC=0
DC Current Gain
hFE*
IC=10A, VCE=4V
15
IC=20A, VCE=4V
5
Collector Emitter Saturation Voltage VCE(sat)
IC=10A, IB=1A
IC=20A, IB=4A
Base Emitter On Voltage
VBE(on)
IC=10A, VCE=4V
Continental Device India Limited
Data Sheet
MAX
10
5.0
UNITS
V
V
V
mA
mA
10
5.0
mA
5.0
mA
60
1.4
V
4.0
2.2
V
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