AP30G100W
160
T C =25 o C
120
80
40
20V
18V
15V
12V
V GE =10V
0
0
3
6
9
12
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
160
140
V GE =15V
120
T C =25 ℃
100
T C =150 ℃
80
60
40
20
0
0
2
4
6
8
10
12
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
1.4
1.1
0.8
0.5
-50
0
50
100
150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
100
T C =150 o C
80
60
40
20V
18V
15V
12V
V GE =10V
20
0
0
3
6
9
12
V CE , Collector-Emitter Voltage (V)
Fig 2. Typical Output Characteristics
6
V GE = 15 V
5
I C = 60 A
4
I C =30A
3
2
1
0
40
80
120
160
Junction Temperature ( o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
10000
f=1.0MHz
C ies
100
C oes
C res
1
1
10
100
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
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