A1216 Ver la hoja de datos (PDF) - Inchange Semiconductor

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fabricante

A1216

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1216

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -0.8A

ICBO

Collector Cutoff Current

VCB= -180V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

hFE

DC Current Gain

IC= -8A; VCE= -4V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= 0; VCB= -10V;ftest= 1.0MHz

IE= 2A; VCE= -12V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -10A ,RL= 4Ω,

IB1= -IB2= -1A,VCC= -40V

MIN TYP. MAX UNIT

-180

V

-2.0 V

-100 μA

-100 μA

30

180

500

pF

40

MHz

0.3

μs

0.7

μs

0.2

μs

‹ hFE Classifications

O

Y

P

G

30-60 50-100 70-140 90-180

isc Website：www.iscsemi.cn

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