BAV20 Ver la hoja de datos (PDF) - Philips Electronics

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componentes Descripción

fabricante

BAV20

General purpose diodes

Philips Electronics 

Philips Semiconductors

General purpose diodes

Product specification

BAV20; BAV21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

see Fig.3

IF = 100 mA

IF = 200 mA

see Fig.5

VR = VRmax

VR = VRmax; Tj = 150 °C

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.8

MIN.

−

−

−

−

−

−

MAX.

1.0

1.25

100

100

5

50

UNIT

V

V

nA

µA

pF

ns

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point lead length 10 mm

thermal resistance from junction to ambient lead length 10 mm; note 1

Note

1. Device mounted on a printed circuit-board without metallization pad.

VALUE

240

375

UNIT

K/W

K/W

1999 May 25

4

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