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NTE2315

Silicon NPN Transistor Fast Switching Power Darlington

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Damper Diode Forward Voltage

Turn–Off Time

Resistive Load

VF IF = 4A, Note 1

toff IC = 5A, IB1 = 50mA

–

–

2

V

– 0.4 1.0 µs

Turn–On Time

Storage Time

Fall Time

ton IC = 5A, IB1 = 50mA,

ts

IB2 = –500mA, VCC = 100V

tf

– 0.35 – µs

– 0.55 – µs

– 0.20 – µs

Note 1. Pulse test: Pulse Duration = 300µs, Duty Cycle = 1.5%.

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

C

B

D2

D1

R1 R2

E

.070 (1.78) Max

Base

.100 (2.54)

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

Collector/Tab

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