BDT60B Ver la hoja de datos (PDF) - Power Innovations Ltd

Número de pieza

componentes Descripción

fabricante

BDT60B

PNP SILICON POWER DARLINGTONS

Power Innovations Ltd 

20000

10000

BDT60, BDT60A, BDT60B, BDT60C

PNP SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS115AD

TC = -40°C

TC = 25°C

TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

-2·0

tp = 300 µs, duty cycle < 2%

TCS115AB

IB = IC / 100

-1·5

1000

VCE = -3 V

tp = 300 µs, duty cycle < 2%

100

-0·5

-1·0

IC - Collector Current - A

Figure 1.

-1·0

-0·5

0

-5·0

-0·5

TC = -40°C

TC = 25°C

TC = 100°C

-1·0

-5·0

IC - Collector Current - A

Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

-3·0

TCS115AC

TC = -40°C

TC = 25°C

-2·5 TC = 100°C

-2·0

-1·5

-1·0

IB = IC / 100

tp = 300 µs, duty cycle < 2%

-0·5

-0·5

-1·0

-5·0

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

3

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