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2SD1985P

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1985 2SD1985A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

breakdown voltage

2SD1985

2SD1985A

IC=30mA , IB=0

VCEsat Collector-emitter saturation voltage IC=3A;IB=0.375A

VBE

Base-emitter voltage

VCE=4V;IC=3A

ICES

Collector

cut-off current

2SD1985 VCE=60V;IB=0

2SD1985A VCE=80V;IB=0

ICEO

Collector

cut-off current

2SD1985 VCE=30V;IB=0

2SD1985A VCE=60V;IB=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=4V

hFE-2

DC current gain

IC=3A ; VCE=4V

fT

Transition frequency

IC=0.5A; VCE=5V;f=10MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=1A ;IB1=0.1A

IB2=-0.1A;VCC=50V

MIN TYP. MAX UNIT

60

V

80

1.2

V

1.8

V

200

μA

300

μA

1

mA

70

250

10

30

MHz

0.5

μs

2.5

μs

0.4

μs

‹ hFE-1 Classifications

Q

P

70-150

120-250

2

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