PSD105/14 Ver la hoja de datos (PDF) - Powersem GmbH
Número de pieza
componentes Descripción
fabricante
PSD105/14 Datasheet PDF : 2 Pages
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PSD 105
200
A
160
120
T=150°C
80
40
T=25°C
IF
0
VF 1
1.5 V
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
1500
1350
5
10
A2s
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
10
TVJ=45°C
TVJ=150°C
3
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
500
[W] PSD 105
400
80
TC
85
0.11 0.06 = RTHCA [K/W]
90
0.16
95
100
300
105
0.26
110
115
200
100
PVTOT
0
25
IFAVM
0.46
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.06
75
125 0
50
[A] Tamb
100
120
125
130
135
140
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
160
[A]
120
80
DC
sin.180°
rec.120°
rec.60°
rec.30°
40
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
K/W
1.2
1
0.8
0.6
0.4
0.2
Z th
Z thJK
Z thJC
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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