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VG3617161DT-7

16Mb CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

VIS

Preliminary

VG3617161DT

16Mb CMOS Synchronous Dynamic RAM

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to Vss

Supply voltage relative to Vss

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Symbol

Value

Unit

VIN,VOUT

-1.0 to +4.6

V

VDD,VDDQ

-1.0 to +4.6

V

IOUT

50

mA

PD

1.0

W

TOPT

0 to + 70

¢J

TSTG

-55 to + 125

¢J

Recommended DC Operating Conditions

Parameter

Supply Voltage

Input High Voltage, all inputs

Input Low Voltage, all inputs

Symbol

VDD

VIH

VIL

Min

Typ

Max

Unit

3.0

3.3

3.6

V

2.0

¡ Ð

VDD+0.3

V

-0.3

¡ Ð

0.8

V

Note 1.Overshoot limit : VIH(MAX.)=VDDQ+2.0V with a pulse width < 3ns

2.Undershoot limit : VIL=VSSQ-2.0V with a pulse < 3ns and -1.5V with a pulse < 5ns

Note

1

2

Parameter

IIL

IOL

VOH

VOL

Description

Input Leakage Current

(0V ≤ VIN ≤ VDD All other pins not under test = OV)

Output Leakage Current

Output disable, ( 0V ≤ VOUT ≤ VDDQ )

LVTTL Output ”H” Level Voltage

(lOUT = -2mA)

LVTTL Output ”L” Level Voltage

(lOUT = 2mA)

Min.

-5

-5

2.4

-

Max.

5

5

-

0.4

Unit Note

µA

µA

V

V

Document:1G5-0160

Rev.1

Page 4

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