NTE2946 Ver la hoja de datos (PDF) - NTE Electronics
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NTE2946 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage BVDSS VGS = 0v, ID = 250µA
500 – – V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 – 4.0 V
Gate–Source Leakage Forward
IGSS VGS = 20V
– – 100 nA
Gate–Source Leakage Reverse
IGSS VGS = –20V
– – –100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
– – 250 µA
VDS = 0.8 Max. Rating, TC = +125°C
– – 1000 µA
Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 4A, Note 4
– – 0.85 Ω
Forward Transconductance
gfs VDS ≥ 50V, ID = 4A, Note 4
4.0 6.5 – mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
– 1510 – pF
Output Capacitance
Coss
– 154 – pF
Reverse Transfer Capacitance
Crss
– 66 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
td(on) VDD = 0.5 BVDSS, ID = 8A, ZO = 9.1Ω,
– 14 21 ns
tr
(MOSFET switching times are essentially
independent of operating temperature)
–
23 35
ns
td(off)
– 49 74 ns
Fall Time
tf
– 20 30 ns
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Qg VGS = 10V, ID = 8A, VDS = 0.8 Max.
Qgs
Rating, (Gate charge is essentially
independent of operating temperature)
Qgd
– – 74 nC
– 9 – nC
– 27 – nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +25°C, IS = 8A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 8A, dIF/dt = 100A/µs
–– 8 A
– – 32 A
–– 2 V
– 460 970 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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