2SC3856 Ver la hoja de datos (PDF) - Inchange Semiconductor
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fabricante
2SC3856 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3856
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
180
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=200V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
2.0
V
100 μA
100 μA
hFE
DC current gain
IC=3A ; VCE=4V
50
180
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
300
pF
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4Ω
IB1=- IB2=1A
VCC=40V
0.50
μs
1.80
μs
0.60
μs
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
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