7
ID=1A
6
5
4
R DS(on) - Tc
V GSV=1G0SV=20V
2SK2919
5
4
3
ID - Tc
VDS=10V
VGS=10V
3
2
2
1
1
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
V GS(off) - Tc
5
VDS=10V
ID=1mV
4
3
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
Ciss,Coss,Crss - VDS
5
3
VGS=0
f = 1MHz
2
1000
7
5
3
2
Ciss
100
7
5
Coss
3
2
Crss
10
7
5
0
4
8
12
16
20
24
28
32
Drain-to-Source Voltage, VDS – V
ASO
2
10 IDP
<1µs
7
5
3
2
ID
1
1ms
0 01µ0 sµ
s
1.0
7
5
3
2
Operation in
is limited by
this area
RDS(on).
DC
o p e1r0a0tm1i o0snms
0.1
7
5
3
Tc=25°C
Single pulse
2
2 3 5 7 10
2 3 5 7 100 2 3
Drain-to-Source Voltage, VDS – V
5 7 1000
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IF - VSD
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD – V
SW Time - ID
VDD=200V
VGS=10V
P.W=1µs
D.C≤0.5%
100
7
5
3
2
10
7
5
3
2
5 7 0.1
40
td(off)
tf
tr
td(on)
23
5 7 1.0
23
5
Drain Current, ID – A
PD - Tc
35
30
20
10
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc – ˚C
No.6121–3/4