LBC847BDW1T1G Ver la hoja de datos (PDF) - Leshan Radio Company

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LBC847BDW1T1G

NPN Duals Dual General Purpose Transistors

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

LBC846ADW1T1G Series

S-LBC846ADW1T1G Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I C = 10 mA)

LBC846 Series

LBC847 Series

V (BR)CEO

LBC848 Series

Collector–Emitter Breakdown Voltage

(I C = 10 µA, V EB = 0)

LBC846 Series

LBC847 Series

V (BR)CES

LBC848 Series

Collector–Base Breakdown Voltage

(I C = 10 µA)

LBC846 Series

LBC847 Series

V (BR)CBO

LBC848 Series

Emitter–Base Breakdown Voltage

(I E = 1.0 µA)

LBC846 Series

LBC847 Series

V (BR)EBO

LBC848 Series

Collector Cutoff Current

(V CB = 30 V)

I CBO

(V CB = 30 V, T A = 150°C)

ON CHARACTERISTICS

DC Current Gain

(I C = 2.0 mA, V CE = 5.0 V)

h FE

LBC846A

LBC846B, LBC847B, LBC848B

LBC847C, LBC848C

Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)

Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA)

Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)

Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)

Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)

Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)

V CE(sat)

V BE(sat)

V BE(on)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

fT

(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)

Output Capacitance (V CB = 10 V, f = 1.0 MHz)

C obo

Noise Figure (I C = 0.2 mA,

NF

V CE = 5.0 V dc, R S = 2.0 kΩ, LBC846A,LBC846B, LBC847B, LBC848B

f = 1.0 kHz, BW = 200 Hz) LBC847C, LBC848C

Min

65

45

30

80

50

30

80

50

30

6.0

6.0

5.0

—

—

110

200

420

—

—

—

—

580

—

100

—

—

—

Typ

Max

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

15

—

5.0

180

220

290

450

520

800

—

0.25

—

0.6

0.7

—

0.9

—

660

700

—

770

—

—

—

4.5

—

10

—

4.0

Unit

V

V

V

V

nA

µA

—

V

V

mV

MHz

pF

dB

Rev.O 2/6

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