PSB55 Ver la hoja de datos (PDF) - Powersem GmbH
Número de pieza
componentes Descripción
fabricante
PSB55 Datasheet PDF : 2 Pages
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PSB 55
200
1:TVJ= 150°C
[A]
2:TVJ= 25°C
150
100
50
IF
1
2
0
0.5 1 1.5 2 2.5
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
I-IFF-S(-MO-V-)-
1.6
1.4
IFSM (A)
TVJ=45°C TVJ=150°C
750
670
4
10
A2s
TVJ=45°C
1.2
3
10
TVJ=150°C
1
0.8
0.6
0.4
100
0 VRRM
1/2 VRRM
1 VRRM
101 t[ms] 102
2
10
1
103
2
46
10
t [ms]
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
100
[W]
PSB
55
80
60
40
20
PVTOT
0
10
IFAVM
85
TC
0.6 0.35 = RTHCA [K/W] 90
0.85
95
100
105
1.35
110
115
120
2.35
125
DC
sin.180°
rec.120°
rec.60°
rec.30°
5.35
30
0
50
[A] Tamb
130
135
140
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
4
K/W
3
Z thJK
Z thJC
70
[A]
50
DC
sin.180°
rec.120°
rec.60°
.30°
30
10
IdAV
0
50 100 150 20
TC(°C)
Fig.5 Maximum forward current
at case temperature
2
1
Zth
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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