2SC4784 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SC4784

Silicon NPN Epitaxial Transistor

Hitachi -> Renesas Electronics 

2SC4784

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

20

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

Symbol Min

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

fT

7.0

PG

12.0

NF

—

Typ Max Unit

—

10

µA

—

1

mA

—

10

µA

120 250

0.45 0.8 pF

10.0 —

GHz

15.0 —

dB

1.2 2.5 dB

Test conditions

VCB = 15 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 10 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 10 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

2

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