2SD974 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SD974

Silicon NPN Epitaxial Transistor

Hitachi -> Renesas Electronics 

2SD974

Collector to Emitter Saturation

Voltage vs. Base Current

5

2

1 A 1.5 A Pulse

1.0

0.5

0.2

IC = 0.5 A

0.1

0.05

0.002 0.005 0.01 0.02 0.05 0.1 0.2

Base Current IB (A)

Collector to Emitter Saturation Voltage vs.

Collector Current

2

IC/IB = 20

1.0

0.5

Pulse

0.2

75

0.1

25

0.05

Ta = –25°C

0.02

0.02

0.05 0.1 0.2 0.5 1.0 2

Collector Current IC (A)

Base to Emitter Saturation Voltage vs.

Collector Current

1.5

IC/IB = 20

1.3

Pulse

1.1

0.9

–25

25

0.7

Ta = 75°C

0.5

0.02

0.05 0.1 0.2 0.5 1.0 2.0

Collector Current IC (A)

4

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