SVF8N60F Ver la hoja de datos (PDF) - Silan Microelectronics
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SVF8N60F Datasheet PDF : 8 Pages
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SVF8N60T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Rating
SVF8N60T
SVF8N60F
600
±30
8.0
5.0
32.0
147
48
1.18
0.38
450
-55～+150
-55～+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Rating
SVF8N60T
SVF8N60F
0.85
2.6
62.50
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=4.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V, RG=25Ω,
ID=8.0A
(Note 2,3)
VDS=480V,ID=8.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
Unit
V
µA
nA
V
-- 0.96 1.2
Ω
--
910
--
--
105
--
pF
-- 2.43 --
-- 29.00 --
-- 71.33 --
ns
-- 34.93 --
-- 32.80 --
-- 14.83 --
-- 5.90 --
nC
-- 4.00 --
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2012.06.15
Page 2 of 8
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