MT46V16M16TG-75Z Ver la hoja de datos (PDF) - Micron Technology

Número de pieza

componentes Descripción

fabricante

MT46V16M16TG-75Z

256Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

256Mb: x4, x8, x16

DDR SDRAM

Figure 43: Data Input Timing

CK#

CK

DQS

DQ

DM

T03

T1 T1n T2 T2n T3

tDQSS

tDSH1 tDSS2 tDSH1 tDSS2

tWPRES tWPRE

DI

b

tDQSL tDQSH tWPST

tDS

tDH

TRANSITIONING DATA

DON’T CARE

NOTE:

1. tDSH (MIN) generally occurs during tDQSS (MIN).

2. tDSS (MIN) generally occurs during tDQSS (MAX).

3. WRITE command issued at T0.

4. For x16, LDQS controls the lower byte and UDQS controls the upper byte.

09005aef8076894f

256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN

68

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

Share Link: