MT46V16M16TG-75Z Ver la hoja de datos (PDF) - Micron Technology

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MT46V16M16TG-75Z

256Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

tDH for each 0.1 V/ns reduction in slew rate. For -

6, -6T and -6R speed grades, slew rate must be

³ 0.5 V/ns. If slew rate exceeds 4 V/ns, functional-

ity is uncertain.

32. VDD must not vary more than four percent if CKE

is not active while any bank is active.

33. The clock is allowed up to ±150ps of jitter. Each

timing parameter is allowed to vary by the same

amount.

34. tHP (MIN) is the lesser of tCL minimum and tCH

minimum actually applied to the device CK and

CK# inputs, collectively during bank active.

35. READs and WRITEs with auto precharge are not

allowed to be issued until tRAS (MIN) can be satis-

fied prior to the internal PRECHARGE command

being issued.

36. Any positive glitch must be less than 1/3 of the

clock cycle and not more than +400mV or 2.9V,

whichever is less. Any negative glitch must be less

than 1/3 of the clock cycle and not exceed either

-300mV or 2.2V, whichever is more positive.

37. Normal output drive curves:

a. The full variation in driver pull-down current

from minimum to maximum process, temper-

ature, and voltage will lie within the outer

bounding lines of the V-I curve of Figure 36

b. The variation in driver pull-down current

within nominal limits of voltage and tempera-

ture is expected, but not guaranteed, to lie

within the inner bounding lines of the V-I

curve of Figure 36.

c. The full variation in driver pull-up current

from minimum to maximum process, temper-

ature and voltage will lie within the outer

bounding lines of the V-I curve of Figure 37.

Figure 36: Full Drive Pull-Down

Characteristics

160

140

120

100

80

60

40

20

0

0.0

0.5

1.0

1.5

2.0

2.5

VOUT (V)

256Mb: x4, x8, x16

DDR SDRAM

d. The variation in driver pull-up current within

nominal limits of voltage and temperature is

expected, but not guaranteed, to lie within the

inner bounding lines of the V-I curve of

Figure 37.

e. The full variation in the ratio of the maximum

to minimum pull-up and pull-down current

should be between 0.71 and 1.4, for device

drain-to-source voltages from 0.1V to 1.0V, and

at the same voltage and temperature. f ) The

full variation in the ratio of the nominal pull-

up to pull-down current should be unity ±10

percent, for device drain-to-source voltages

from 0.1V to 1.0V.

38. Reduced output drive curves:

a. The full variation in driver pull-down current

from minimum to maximum process, temper-

ature, and voltage will lie within the outer

bounding lines of the V-I curve of Figure 38.

b. The variation in driver pull-down current

within nominal limits of voltage and tempera-

ture is expected, but not guaranteed, to lie

within the inner bounding lines of the V-I

curve of Figure 38.

c. The full variation in driver pull-up current

from minimum to maximum process, temper-

ature and voltage will lie within the outer

bounding lines of the V-I curve of Figure 39.

d. The variation in driver pull-up current within

nominal limits of voltage and temperature is

expected, but not guaranteed, to lie within the

inner bounding lines of the V-I curve of

Figure 39.

Figure 37: Full Drive Pull-Up

Characteristics

0

-20

-40

-60

-80

-100

-120

-140

-160

-180

-200

0.0

0.5

1.0

1.5

2.0

2.5

VDD Q - V OUT (V )

09005aef8076894f

256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN

61

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

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