2SK2489 Ver la hoja de datos (PDF) - Shindengen

Número de pieza

componentes Descripción

fabricante

2SK2489

VZ Series Power MOSFET

Shindengen 

VZ Series Power MOSFET

2SK2489 ( F10S18VZ )

●Electrical Characteristics Tc = 25℃

Item

Symbol

Conditions

Drain-Source Breakdown Voltage

V(BR)DSS ID = 1mA, VGS = 0V

Zero Gate Voltage Drain Current

IDSS VDS = 180V, VGS = 0V

Gate-Source Leakage Current

IGSS VGS = ±30V, VDS = 0V

Forward Tranｓconductance

gfs ID = 5A, VDS = 10V

Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 5A, VGS = 10V

Gate Threshold Voltage

VTH ID = 1mA, VDS = 10V

Source-Drain Diode Forward Voltage

VSD IS = 5A, VGS = 0V

Thermal Resistance

θjc junction to case

Total Gate Charge

Qg VDD = 150V, VGS = 10V, ID = 10A

Input Capacitance

Ciss

Reverse Transfer Capacitance

Crss VDS = 10V, VGS = 0V, f = 1MHZ

Output Capacitance

Coss

Turn-On Time

ton ID = 5A, VGS = 10V, RL = 20Ω

Turn-Off Time

toff

Min. Typ. Max. Unit

180

V

250 μA

±0.1

3.0 7.0

S

0.17 0.25 Ω

2.0 3.0 4.0 V

1.5

2.77 ℃/Ｗ

25

nC

720

80

pF

280

50 100 ns

140 280

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