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40QR21

40QR21 / Discrete IGBTs Silicon N-Channel IGBT

Toshiba 

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25, unless otherwise specified)

Characteristics

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Diode forward voltage

Symbol

Test Condition

Min

IGES VGE = ±25 V, VCE = 0 V



ICES VCE = 1200 V, VGE = 0 V



VGE(OFF) IC = 40 mA, VCE = 5 V

4.5

VCE(sat)(1) IC = 20 A, VGE = 15 V



VCE(sat)(2) IC = 20 A, VGE = 15 V,



Tj = 125

VCE(sat)(3) IC = 20 A, VGE = 15 V,



Tj = 175

VCE(sat)(4) IC = 40 A, VGE = 15 V



VCE(sat)(5) IC = 40 A, VGE = 15 V,



Tj = 125

VCE(sat)(6) IC = 40 A, VGE = 15 V,



Tj = 175

VF

IF = 15 A, VGE = 0 V



GT40QR21

Typ. Max Unit

 ±100 nA



1

mA



7.5

V

1.50 

1.75 

1.89 

1.90 2.70

2.29 

2.50 



2.6

3

2011-06-06

Rev.1.0

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