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2N7002CK,215

60 V, 0.3 A N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

2.4

a

1.8

1.2

0.6

017aaa009

3

VGS(th)

(V)

2

1

017aaa010

(1)

(2)

(3)

0.0

−60

0

60

a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)

120

180

Tj (°C)

Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature

102

(1)

C

(pF)

(2)

0

−60

0

60

120

180

Tj (°C)

ID = 0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

Fig 10. Gate-source threshold voltage as a function of

junction temperature

017aaa011

10

(3)

1

10−1

1

10

102

VDS (V)

VGS = 0 V; f = 1 MHz

(1) Ciss

(2) Coss

(3) Crss

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

2N7002CK_1

Product data sheet

Rev. 01 — 11 September 2009

© NXP B.V. 2009. All rights reserved.

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