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2N7002CK,215

60 V, 0.3 A N-channel Trench MOSFET

NXP Semiconductors. 

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Rev. 01 — 11 September 2009

Product data sheet

1. Product profile

1.1 General description

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a

small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features

I Logic-level compatible

I Very fast switching

I Trench MOSFET technology

I ESD protection up to 3 kV

1.3 Applications

I Relay driver

I High-speed line driver

I Low-side loadswitch

I Switching circuits

1.4 Quick reference data

Table 1.

Symbol

VDS

ID

IDM

Quick reference data

Parameter

drain-source voltage

drain current

peak drain current

RDSon

drain-source on-state

resistance

Conditions

single pulse;

tp ≤ 10 µs

VGS = 10 V;

ID = 500 mA

Min Typ Max Unit

-

-

60

V

-

-

300 mA

-

-

1.2 A

-

1.1 1.6 Ω

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