2SD1632 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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fabricante

2SD1632

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1632

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=500mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=3A ;IB=1A

VBEsat

Base-emitter saturation voltage

IC=3A ;IB=1A

ICBO

Collector cut-off current

VCB=750V; IE=0

VCB=1500V; IE=0

hFE

DC current gain

IC=3A ; VCE=10V

VF

Diode forward voltage

IC=-4A

Switching times

tstg

Storage time

tf

Fall time

IC=3A

IBend=1A;LLeak=5µH

MIN TYP. MAX UNIT

5

V

1.0

V

1.5

V

50

µA

1

mA

5

15

2.2

V

4

9

µs

0.8

µs

2

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