ISL9V5045S3ST Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
ISL9V5045S3ST Datasheet PDF : 9 Pages
| |||
Typical Characteristics (Continued)
1.10
1.05
1.00
ICE = 6A
VGE = 3.7V
VGE = 4.0V
1.25
1.20
1.15
ICE = 10A
VGE = 3.7V
VGE = 4.0V
0.95
0.90
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
1.10
1.05
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
0.85
-50 -25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
1.00
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
30 VGE = 3.7V
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
30 VGE = 3.7V
20
20
10
10
TJ = - 40°C
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
TJ = 25°C
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 175°C
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
50
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
40
30
TJ = 175°C
20
TJ = 25°C
10
TJ = -40°C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
Share Link: 