NGD8201AN Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
fabricante
NGD8201AN Datasheet PDF : 8 Pages
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NGD8201N, NGD8201AN
TYPICAL ELECTRICAL CHARACTERISTICS
400
350
TJ = 25°C
300
250
TJ = 175°C
200
150
100
50
0
0
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
2
4
6
8
10
INDUCTOR (mH)
Figure 1. Self Clamped Inductive Switching
2.0
1.75
IC = 25 A
1.5
1.25
IC = 20 A
IC = 15 A
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25 VGE = 4.5 V
0.0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
60
VGE = 10 V
50
5V
40
TJ = 25°C
30
20
4.5 V
4V
3.5 V
3V
10
2.5 V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
30
VCC = 14 V
25
VGE = 5.0 V
RG = 1000 W
20
L = 1.8 mH
15
L = 3.0 mH
10
L = 10 mH
5
0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Open Secondary Avalanche Current
vs. Temperature
60
VGE = 10 V
50
5V
TJ = 175°C
40
30
4.5 V
4V
3.5 V
3V
20
2.5 V
10
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
VGE = 10 V
50
5V
40
TJ = −40°C
30
4.5 V
4V
3.5 V
20
3V
10
2.5 V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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