NTMFS4927NC(2012) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

fabricante

NTMFS4927NC
(Rev.:2012)

Power MOSFET

ON Semiconductor 

NTMFS4927N, NTMFS4927NC

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

Symbol

RqJC

RqJA

RqJA

RqJA

Value

6.0

46.3

136.2

20.7

Unit

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

(transient)

V(BR)DSS

V(BR)DSSt

VGS = 0 V, ID = 250 mA

VGS = 0 V, ID(aval) = 8.4 A,

Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 5)

V(BR)DSS/

TJ

IDSS

IGSS

VGS = 0 V,

VDS = 24 V

TJ = 25°C

TJ = 125°C

VDS = 0 V, VGS = ±20 V

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

VGS(TH)

VGS(TH)/TJ

RDS(on)

Forward Transconductance

gFS

CHARGES, CAPACITANCES & GATE RESISTANCE

VGS = VDS, ID = 250 mA

VGS = 10 V

ID = 30 A

ID = 15 A

VGS = 4.5 V

ID = 30 A

ID = 15 A

VDS = 1.5 V, ID = 15 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Capacitance Ratio

CISS

COSS

CRSS

CRSS /

CISS

VGS = 0 V, f = 1 MHz, VDS = 15 V

VGS = 0 V, VDS = 15 V, f = 1 MHz

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Total Gate Charge

SWITCHING CHARACTERISTICS (Note 6)

QG(TOT)

QG(TH)

QGS

QGD

QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V; ID = 30 A

Turn−On Delay Time

td(ON)

Rise Time

Turn−Off Delay Time

tr

td(OFF)

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

Fall Time

tf

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

Min Typ

30

34

24

1.32 1.6

3.7

5.8

5.7

9.6

9.2

40

913

366

108

0.118

8.0

1.6

3.1

3.1

16.0

9.2

25.5

14.0

4.4

Max

1.0

10

±100

2.2

7.3

12

0.237

Unit

V

V

mV/°C

mA

nA

V

mV/°C

mW

S

pF

nC

nC

ns

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