NTMFS4927NC(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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NTMFS4927NC Datasheet PDF : 7 Pages
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NTMFS4927N,
NTMFS4927NC
Power MOSFET
30 V, 38 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Optimized for 5 V, 12 V Gate Drives
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
13.6
A
TA = 100°C
8.6
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
PD
TA = 25°C
ID
TA = 100°C
2.70 W
20.4
A
12.9
Power Dissipation
TA = 25°C
PD
RqJA ≤ 10 s (Note 1) Steady
Continuous Drain
State TA = 25°C
ID
Current RqJA
(Note 2)
TA = 100°C
6.04 W
7.9
A
5.0
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
PD
TC = 25°C
ID
TC =100°C
0.92 W
38
A
24
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
Pulsed Drain
Current
TA = 25°C, tp = 10 ms
IDM
20.8 W
160
A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 20 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
−55 to
+150
21
6.0
20
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.3 mW @ 10 V
12.0 mW @ 4.5 V
D (5,6)
ID MAX
38 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
D
S 4927N
S AYWZZ
G
D
D
4927N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4927NT1G SO−8 FL
NTMFS4927NCT1G (Pb−Free)
1500 /
Tape & Reel
NTMFS4927NT3G SO−8 FL
NTMFS4927NCT3G (Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
June, 2012 − Rev. 8
Publication Order Number:
NTMFS4927N/D
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