IPD096N08N3G Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
fabricante
IPD096N08N3G Datasheet PDF : 9 Pages
| |||
Parameter
Symbol Conditions
IPD096N08N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=40 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=40 V, V GS=10 V,
-
t d(off)
I D=40 A, R G=1.6 Ω
-
tf
-
1810
490
20
13
30
23
5
2410 pF
652
-
- ns
-
-
-
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
9
- nC
Q gd
-
5
-
Q sw
V DD=40 V, I D=46 A,
V GS=0 to 10 V
-
10
-
Qg
-
26
35
V plateau
-
5.2
-V
Q oss
V DD=40 V, V GS=0 V
-
35
47 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=46 A,
T j=25 °C
t rr
V R=40 V, I F=40A,
Q rr
di F/dt =100 A/µs
-
-
74 A
-
-
296
-
1.0
1.2 V
-
57
- ns
-
91
- nC
5) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2008-10-20
Share Link: 