W971GG6SB-18TR Ver la hoja de datos (PDF) - Winbond

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fabricante

W971GG6SB-18TR

8M x 8 BANKS x 16 BIT DDR2 SDRAM

Winbond 

W971GG6SB

11.27 Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3

T0

T3

T4

T5

T6

T7

T8

T9

T11

CLK/CLK

CMD

Post CAS

WRA Bank A

A10 = 1

DQS,

DQS

DQ's

NOP

NOP

NOP

NOP

NOP

NOP

NOP

Completion of the Burst Write

Auto-precharge Begins

WL = RL - 1 = 4

DIN DIN DIN DIN

A0

A1

A2

A3

≥ WR

≥ tRC

tRP min.

Bank A

Activate

11.28 Self Refresh Timing

T0

T1

tCK

tCH tCL

CLK

CLK

CKE

ODT

CMD

T2

T3

VIL(ac)

tIS

tAOFD

T4

T5

T6

tRP

VIL(ac)

tIS

tIH

tIS tIH

VIH(ac)

VIL(ac)

Self

Refresh

VIH(dc)

VIL(dc)

Tm

Tn

VIH(ac)

≥ tXSNR

≥ tXSRD

tIH

tIS

tIH

NOP

Non-Read

Command

NOP

Read

Command

Notes:

1. Device must be in the “All banks idle” state prior to entering Self Refresh mode.

2. ODT must be turned off tAOFD before entering Self Refresh mode, and can be turned on again when tXSRD timing is

satisfied.

3. tXSRD is applied for a Read or a Read with Auto-precharge command. tXSNR is applied for any command except a Read or a

Read with Auto-precharge command.

- 83 -

Publication Release Date: Dec. 26, 2014

Revision: A01

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