900N20N Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

900N20N

OptiMOS™3 Power-Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case R thJC

Thermal resistance,

junction - ambient

R thJA

6 cm2 cooling area3)

BSZ900N20NS3 G

min.

Values

typ.

Unit

max.

-

-

2.5 K/W

-

-

60

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

200

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=30 µA

2

3

Zero gate voltage drain current

I DSS

V DS=160 V, V GS=0 V,

T j=25 °C

-

0.1

-V

4

1 µA

V DS=160 V, V GS=0 V,

T j=125 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on) V GS=10 V, I D=7.6 A

-

Gate resistance

RG

-

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=7.6 A

8

10

100

1

100 nA

77

90 mW

2.2

-W

16

-S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.2

page 2

2011-07-14

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