900N20N Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

900N20N

OptiMOS™3 Power-Transistor

Infineon Technologies 

Type

OptiMOSTM3 Power-Transistor

Features

• Optimized for dc-dc conversion

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Low on-resistance R DS(on)

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target application

• Halogen-free according to IEC61249-2-21

BSZ900N20NS3 G

Product Summary

VDS

RDS(on),max

ID

200 V

90 mW

15.2 A

PG-TSDSON-8

Type

BSZ900N20NS3 G

Package

Marking

PG-TSDSON-8 900N20N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

Pulsed drain current2)

Avalanche energy, single pulse

Reverse diode dv /dt

ID

I D,pulse

E AS

dv /dt

T C=25 °C

T C=100 °C

T C=25 °C

I D=7.6 A, R GS=25 W

Gate source voltage

V GS

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

1)J-STD20 and JESD22

2) see figure 3

Value

15.2

10.7

61

100

10

±20

62.5

-55 ... 150

55/150/56

Unit

A

mJ

kV/µs

V

W

°C

Rev. 2.2

page 1

2011-07-14

Share Link: