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FDP65N06

60V N-Channel MOSFET

Fairchild Semiconductor 

FDP65N06

60V N-Channel MOSFET

Features

• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V

• Low gate charge ( typical 132nC)

• Low Crss ( typical 35pF)

• Fast switching

• Improved dv/dt capability

June 2006

UniFETTM

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

D

G

GDS

TO-220

FDP Series

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

- Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

S

FDP65N06

60

65

41

260

± 20

430

65

13.5

4.5

135

1.08

-55 to +150

300

FDP65N06

0.92

62.5

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

©2006 Fairchild Semiconductor Corporation

1

FDP65N06 Rev. A1

www.fairchildsemi.com

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