IRF1018EPBF Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
fabricante
IRF1018EPBF Datasheet PDF : 11 Pages
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IRF1018E/S/SLPbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
60
40
20
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
1msec
100μsec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10msec
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
80
Id = 5mA
75
70
65
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
400
ID
350
TOP
5.3A
11A
300
BOTTOM 47A
250
200
150
100
50
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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