STD2N80K5 Ver la hoja de datos (PDF) - STMicroelectronics

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STD2N80K5

N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol

Parameter

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

dv/dt (4)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax)

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tj

Operating junction temperature

Tstg

Storage temperature

1. For TO-220FP limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 2 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS

4. VDS ≤ 640 V

DPAK,

TO-220,

IPAK

TO-220FP

30

2(1)

1.3

8

45

20

0.5

60.5

4.5

50

-55 to 150

Unit

V

A

A

A

W

A

mJ

V/ns

V/ns

°C

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK TO-220FP TO-220 IPAK

Rthj-case Thermal resistance junction-case

Rthj-pcb Thermal resistance junction-pcb

Rthj-amb Thermal resistance junction-amb

1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

2.78

50(1)

6.25

2.78

62.5

2.78

°C/W

100

DocID024993 Rev 3

3/22

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