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SMJ4C1024SV

1048576 by 1-bit dynamic random-access memory

Austin Semiconductor 

SMJ4C1024

1048576 BY 1-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SGMS023E – DECEMBER 1988 – REVISED MARCH 1996

PARAMETER MEASUREMENT INFORMATION

V

1.31 V

IOH / IOL

RL = 218 Ω

Output Under Test

CL = 80 pF

(see Note A)

Output Under Test

CL = 80 pF

(see Note A)

(a) LOAD CIRCUIT

(b) ALTERNATE LOAD CIRCUIT

NOTE A: CL includes probe and fixture capacitance.

Figure 1. Load Circuits for Timing Parameters

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